Naslov
Electron Transport in Thin-Body InGaAs-OI MOSFETs: A Theoretical Viewpoint

Autori
Poljak, Mirko ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, pp prezentacija, znanstveni

Izvornik
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Workshop on Carrier Transport in Nano-Transistors / Tsuchiya, H. ; Kamakura, Y. - Yokohama, 2014, 1-42

Skup
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Workshop on Carrier Transport in Nano-Transistors

Mjesto i datum
Yokohama, Japan, 08.09.2014

Vrsta sudjelovanja
Pozvano predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
ingaas; electron mobility; utra-thin body; transport; scattering; quantum confinement; valley repopulation

Sažetak
This talk gives a description of theory and numerical simulation methods for electron transport in ultra-thin InGaAs layers. Effects of quantum confinement are self-consistently calculated, and bandstructure effects (existence of multiple valleys and thickness-dependent effective masses) are included. Electron mobility is calculated by taking into consideration the following scattering mechanisms: polar and nonpolar optical and acoustic phonons, Coulomb, surface roughness, and alloy scattering. Impact of device architecture (single and double gate) is also discussed.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA