Naslov
Characterization of Silicon Surface Passivation by Photoluminescence/Raman Spectroscopy

Autori
Đerek, Vedran ; Scharber, Markus C. ; Enengl Christina ; Głowacki, Eric D. ; Kosović, Marin ; Sariciftci, Niyazi Serdar ; Ivanda, Mile

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
XXIV. International Conference on Raman Spectroscopy Conference Proceedings / Popp, Jürgen ; Deckert, Volker - Jena : Leibniz Institute of PhotonicTechnology e.V. (IPHT), 2014, 1560-1561

Skup
XXIV. International Conference on Raman Spectroscopy

Mjesto i datum
Jena, Njemačka, 10.08.2014. - 15.08.2014

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
photoluminescence; Raman; Silicon; Surface passivation

Sažetak
Maximization of the power conversion efficiency (PCE) in nanostructured silicon/ PEDOT:PSS hybrid solar cells is an active area of photovoltaic research, due to the reduced thermal budget in production of such devices in comparison to conventional silicon solar cells [1]. Surface passivation of silicon at silicon/organic interface was found to be essential for high efficiency of silicon-based photovoltaics. Surface defects and dangling bonds significantly increase the recombination rate of minority carriers, may pin the Fermi level and cause undesirable band bending at silicon interfaces [2]. Passivation methods for planar silicon surfaces that are currently available [3] are not always compatible with the nanostructured and hybrid organic/inorganic devices, for which appropriate passivation should be developed. Measuring the state of surface passivation is essential in this process. We present a method for the characterization of surface passivation of silicon by simultaneous band gap photoluminescence and Raman spectroscopy.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Kemija

POVEZANOST RADA