Naslov
The Use of Chemical-Mechanical Polishing and Etch-Back Techniques for Bottom Isolation of Pillar-like Devices

Autori
Suligoj, Tomislav ; Biljanović, Petar ; Wang, K. L.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of MIPRO 2001 / Biljanović, Petar; Skala, Karolj - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2001, 3-6

Skup
MIPRO 2001 24th International Convention

Mjesto i datum
Opatija, Hrvatska, 21.05.2001. - 25.05.2001

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
chemical-mechanical polishing;planarization ratio; semi-rigid pad; teflon pad; self-stopping process; removal rate; pillar-like structures

Sažetak
The application of CMP process for the bottom isolation of pillar like devices is investigated. The use of conventional semi-rigid pad with colloidal silica slurry results in low planarization ratio (2.54), while glass pad results in a lot of defects and scratches after the wet etch-back process. The new CMP set up is proposed employing a teflon pad and slurry composed of gamma alumina powder with particles size of 50 nm diluted in DI H_2O with2.5 wt. % of KOH. The planarization ratio of 69 at the beginning of process is achieved with the final SiO_2 surface free of defects and scratches. The process has self-stopping mechanism. The effects of a decreasing removal rate for the SiO_2above pillars, and of an increasing removal rate for the field SiO_2 during the process are explained by the increase of effective contact area and the increase of pressing force on the field SiO_2.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA