Naslov
Effects Of Light Soaking On Amorphous Silicon

Autori
Pivac, Branko ; Kovačević, Ivana ; Zulim, Ivan ; Gradišnik, Vera

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Conference Record Of The 28th IEEE Photovoltaic Specialists Conference / Rohatgi, Ajeet - Piscataway (NJ) : Institute of Electrical and Electronics Engineers (IEEE), 2000, 884-887

Skup
IEEE 28th Photovoltaic Specialists Conference

Mjesto i datum
Anchorage (AK), Sjedinjene Američke Države, 15.09.2000. - 22.09.2000

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
light soaking; amorphous silicon

Sažetak
The effect of light soaking on a-Si:H films is well known as Staebler-Wronski effect, though its complete mechanism is not yet clear. We studied the effect of light soaking with UV, white and sub-gap light on a-Si:H films, as well as the effect of thermal annealing in the dark. It was shown that the light soaking of the films with white and sub-bandgap light in the air did not affect hydrogen concentration from Si-H bonds, and at same time, enhanced oxidation of the films is observed. It means that oxygen incorporation was due to the broken backbonds to Si-H which very likely represent weak bonds. Moreover, it was found that, subgap and white light irradiation produced oxidation, UV light did not, while UV light caused even minor Si-H bonds breaking. Vacuum annealing at 100°C in the dark, on the other hand, caused hydrogen redistribution, enhancing Si-H bonds concentration and recovering broken bonds.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika

POVEZANOST RADA