Pregled bibliografske jedinice broj: 700006
Hybrid-integrated Lateral Bipolar Transistor and CMOS Transistor and Method for Manufacturing the Same
Hybrid-integrated Lateral Bipolar Transistor and CMOS Transistor and Method for Manufacturing the Same
(2013)
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Naslov
Hybrid-integrated Lateral Bipolar Transistor and CMOS Transistor and Method for Manufacturing the Same
Autori
Suligoj, Tomislav ; Koričić, Marko ; Mochizuki, Hidenori ; Morita, So-ichi
Broj patenta
US8569866 B2
Godina
2013
Datum patenta
29.10.2013.
Sažetak
A configuration of a lateral transistor suited for the hybrid-integration (BiCMOS) of a high-performance lateral transistor (HCBT) and a CMOS transistor, and a method for manufacturing the lateral transistor are provided. A semiconductor device a HCBT 100 and a CMOS transistor 200 hybrid-integrated therein. The HCBT 100 has an open region 21 opened by etching a device isolating oxide film 6 surrounding an n-hill layer 11, an emitter electrode 31A and a collector electrode 31B each of which is formed in the open region 21 and is composed of a polysilicon film having such a thickness as to expose the n-hill layer 11 exposed by etching the device isolating oxide film, and an ultrathin oxide film 24 covering at least a part of the n-hill layer 11. The ultrathin oxide film 24 functions as a protective film for protecting the n-hill layer 11 from being etched when the polysilicon film is etched to form the emitter electrode 31A and the collector electrode 31B.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb