Naslov
Porous silicon prepared from p- and p++ bulk silicon

Autori
Đerek, Vedran ; Baltić, Romana ; Marciuš, Marijan ; Ristić, Mira ; Orel, Zorica Crnjak ; Ivanda, Mile

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of 36th International Convention MIPRO 2013 / Biljanovic, Petar ; Skala, Karol - Rijeka : Denona, 2013, 18-21

Skup
36th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2013

Mjesto i datum
Opatija, Hrvatska, 20.05.2013. - 24.05.2013

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Electrochemical dissolution; Galvanostatic conditions; Morphology instabilities; Phonon confinement; Phonon confinement model; Silicon nanocrystals; Silicon substrates; Visible photoluminescence

Sažetak
Macro and meso-porous silicon (PSi) samples were prepared by electrochemical anodisation of p- and p++ doped silicon wafers in hydrofluoric acid (HF) based electrolyte under galvanostatic conditions. Anodisation time and current were varied in order to obtain different PSi morphologies. Samples were characterized by scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy and Raman spectroscopy. Samples prepared on p- type substrates were macro-porous, showed visible photoluminescence and no observable phonon confinement in Raman spectrum. Porous silicon prepared on p++ type substrates was mesoporous, showed no observable photoluminescence and intense phonon confinement was observed in their Raman spectra. Silicon nanocrystal dimensions in PSi samples obtained from photoluminescence and phonon confinement models were correlated with silicon electrochemical dissolution valence nd. A surface morphology instability is identified in case where electrolyte is more conductive than the silicon substrate.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Kemija

POVEZANOST RADA