Pregled bibliografske jedinice broj: 67880
Selective bond breaking in amorphous hydrogenated silicon by using Duke FEL
Selective bond breaking in amorphous hydrogenated silicon by using Duke FEL // The 22nd international free electron laser conference and 7th FEL users workshop, 13 to 18 August 2000, Duke free electron laser laboratory, Durham, North Carolina USA, book of abstracts / V.N.Litvinenko (ur.).
Durham: Duke University, 2000. (predavanje, međunarodna recenzija, sažetak, znanstveni)
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Naslov
Selective bond breaking in amorphous hydrogenated silicon by using Duke FEL
Autori
B. Vlahovic, D. Gracin, V. Borjanovic, J.M. Dutta, A. Sunda Meya, S. Hauger, I. Pinayev, M.E. Ware, D. Alexson and R.J. Nemanich
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
The 22nd international free electron laser conference and 7th FEL users workshop, 13 to 18 August 2000, Duke free electron laser laboratory, Durham, North Carolina USA, book of abstracts
/ V.N.Litvinenko - Durham : Duke University, 2000
Skup
The 22nd international free electron laser conference and 7th FEL users workshop
Mjesto i datum
Durham (NC), Sjedinjene Američke Države, 13.08.2000. - 18.08.2000
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
selective bond breaking; amorphous silicon; silicon-hydrohen bonds; Free Electron Laser
Sažetak
In order to study the possibility of influencing the phase containing predominantly Si-H bonds, with as low as possible influence on remaining material, samples of a-Si were exposed to Duke- FEL Mark III radiation. The wavelength of radiation was selected to fit the maximum absorption of stretching vibrations of Si-H bonds. By varyng the wavelength between 4.8 and 5mm, the illumination time and the power density, different type and degree of structural ordering, monitored by Raman spectroscopy, regarding Si-H bonds and Si-Si bonds was obtained. Using 5 mm at 10 kW/cm2 leads to increase in structural disordering. However, increasing power to 60 kW/cm2 improves both short and intermediate order in a-Si:H. Further increasing power density by an order of magnitude results in crystallization of the sample.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb
Profili:
Vesna Borjanović
(autor)