Naslov
Influence of ion-beam properties on ordering of quantum dots in amorphous matrices

Autori
Bogdanović-Radović, Ivančica ; Buljan, Maja ; Karlušić, Marko ; Skukan, Natko ; Božičević Mihalić, Iva ; Jakšić, Milko ; Radić, Nikola ; Salamon, Krešimir ; Bernstorff, Sigrid

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
Book of Abstracts / - , 2011, PB2-24

Skup
E-MRS 2011 Spring Meeting, Symposium B

Mjesto i datum
Nica, Francuska, 09.05.2011. - 13.05.2011

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
ion irradiation; quantum dots

Sažetak
Ion-beam irradiation of semiconductor/insulator multilayers is found to be an effective method for the production of ordered arrays of quantum dots in amorphous matrices [1, 2]. In the present work we will discuss how the ion beam properties influence the formation and ordering of Ge quantum dots in an amorphous silica matrix. For that purpose Ge+SiO2/SiO2 multilayers were irradiated with two different ion types (O and Si) and several ion energies to investigate the effects of electron and nuclear stopping on the quantum dot arrangement and quality of their ordering. The analysis results show that electron stopping is the most important parameter for the achievement of regular ordering of quantum dots. In addition, by selecting ions with the same electronic stopping but different velocity (O ions with 3 and 15 MeV) we were able to study the influence of the velocity effect on the ordering of quantum dots in semiconductor/insulator multilayers. [1] M. Buljan, I. Bogdanović-Radović, M. Karlušić, U.V. Desnica, G. Dražić, N. Radić, P. Dubček, K. Salamon, S. Bernstorff, V. Holý ; Appl. Phys. Lett. 95, 063104 (2009). [2] M. Buljan, I. Bogdanović-Radović, M. Karlušić, U.V. Desnica, N. Radić, N.Skukan, G. Dražić, M. Ivanda, Z. Matej, V. Valeš, J. Grenzer, T. Cornelius, H. T. Metzger, V. Holý ; Phys. Rev. B 81 085321 (2010).

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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