Pretražite po imenu i prezimenu autora, mentora, urednika, prevoditelja

Napredna pretraga

Pregled bibliografske jedinice broj: 651558

Optimization of Horizontal Current Bipolar Transistor (HCBT) Technology Parameters for Linearity in RF Mixer


Suligoj, Tomislav; Koričić, Marko; Žilak, Josip; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, Hisaya
Optimization of Horizontal Current Bipolar Transistor (HCBT) Technology Parameters for Linearity in RF Mixer // Proceedings of the 2013 Bipolar/BiCMOS Circuits and Technology Meeting
Bordeaux, Francuska: Institute of Electrical and Electronics Engineers (IEEE), 2013. str. 13-16 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


CROSBI ID: 651558 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Optimization of Horizontal Current Bipolar Transistor (HCBT) Technology Parameters for Linearity in RF Mixer

Autori
Suligoj, Tomislav ; Koričić, Marko ; Žilak, Josip ; Mochizuki, Hidenori ; Morita, So-ichi ; Shinomura, Katsumi ; Imai, Hisaya

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 2013 Bipolar/BiCMOS Circuits and Technology Meeting / - : Institute of Electrical and Electronics Engineers (IEEE), 2013, 13-16

Skup
Bipolar/BiCMOS Circuits and Technology Meeting

Mjesto i datum
Bordeaux, Francuska, 01.10.2013. - 03.10.2013

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
BiCMOS integrated circuits; Bipolar transistors; HF radio communication; Horizontal Current Bipolar Transistor; Mixer; Linearity

Sažetak
Double-balanced active mixer based on a Gilbert cell is designed and fabricated as the first RF circuit in Horizontal Current Bipolar Transistor (HCBT) technology. The maximum IIP3 of 17.7 dBm at mixer current of 9.2 mA and conversion gain of -5 dB are achieved. Three different HCBT structures are used in a mixer design to examine the effect of process parameters on mixer linearity. The main effect on the linearity has the n-collector doping profile since it governs the onset of Kirk effect. The improvement of 6 dB in IIP3 can be achieved by using the optimum HCBT structure, if switching quad transistors operate at or near the high current region. The circuit model parameters of three HCBT structures are extracted, accurately reproducing the measured device and circuit data.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Marko Koričić (autor)

Avatar Url Tomislav Suligoj (autor)

Avatar Url Josip Žilak (autor)


Citiraj ovu publikaciju:

Suligoj, Tomislav; Koričić, Marko; Žilak, Josip; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, Hisaya
Optimization of Horizontal Current Bipolar Transistor (HCBT) Technology Parameters for Linearity in RF Mixer // Proceedings of the 2013 Bipolar/BiCMOS Circuits and Technology Meeting
Bordeaux, Francuska: Institute of Electrical and Electronics Engineers (IEEE), 2013. str. 13-16 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Suligoj, T., Koričić, M., Žilak, J., Mochizuki, H., Morita, S., Shinomura, K. & Imai, H. (2013) Optimization of Horizontal Current Bipolar Transistor (HCBT) Technology Parameters for Linearity in RF Mixer. U: Proceedings of the 2013 Bipolar/BiCMOS Circuits and Technology Meeting.
@article{article, author = {Suligoj, Tomislav and Kori\v{c}i\'{c}, Marko and \v{Z}ilak, Josip and Mochizuki, Hidenori and Morita, So-ichi and Shinomura, Katsumi and Imai, Hisaya}, year = {2013}, pages = {13-16}, keywords = {BiCMOS integrated circuits, Bipolar transistors, HF radio communication, Horizontal Current Bipolar Transistor, Mixer, Linearity}, title = {Optimization of Horizontal Current Bipolar Transistor (HCBT) Technology Parameters for Linearity in RF Mixer}, keyword = {BiCMOS integrated circuits, Bipolar transistors, HF radio communication, Horizontal Current Bipolar Transistor, Mixer, Linearity}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {Bordeaux, Francuska} }
@article{article, author = {Suligoj, Tomislav and Kori\v{c}i\'{c}, Marko and \v{Z}ilak, Josip and Mochizuki, Hidenori and Morita, So-ichi and Shinomura, Katsumi and Imai, Hisaya}, year = {2013}, pages = {13-16}, keywords = {BiCMOS integrated circuits, Bipolar transistors, HF radio communication, Horizontal Current Bipolar Transistor, Mixer, Linearity}, title = {Optimization of Horizontal Current Bipolar Transistor (HCBT) Technology Parameters for Linearity in RF Mixer}, keyword = {BiCMOS integrated circuits, Bipolar transistors, HF radio communication, Horizontal Current Bipolar Transistor, Mixer, Linearity}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {Bordeaux, Francuska} }




Contrast
Increase Font
Decrease Font
Dyslexic Font