Pregled bibliografske jedinice broj: 651558
Optimization of Horizontal Current Bipolar Transistor (HCBT) Technology Parameters for Linearity in RF Mixer
Optimization of Horizontal Current Bipolar Transistor (HCBT) Technology Parameters for Linearity in RF Mixer // Proceedings of the 2013 Bipolar/BiCMOS Circuits and Technology Meeting
Bordeaux, Francuska: Institute of Electrical and Electronics Engineers (IEEE), 2013. str. 13-16 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 651558 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Optimization of Horizontal Current Bipolar Transistor (HCBT) Technology Parameters for Linearity in RF Mixer
Autori
Suligoj, Tomislav ; Koričić, Marko ; Žilak, Josip ; Mochizuki, Hidenori ; Morita, So-ichi ; Shinomura, Katsumi ; Imai, Hisaya
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 2013 Bipolar/BiCMOS Circuits and Technology Meeting
/ - : Institute of Electrical and Electronics Engineers (IEEE), 2013, 13-16
Skup
Bipolar/BiCMOS Circuits and Technology Meeting
Mjesto i datum
Bordeaux, Francuska, 01.10.2013. - 03.10.2013
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
BiCMOS integrated circuits; Bipolar transistors; HF radio communication; Horizontal Current Bipolar Transistor; Mixer; Linearity
Sažetak
Double-balanced active mixer based on a Gilbert cell is designed and fabricated as the first RF circuit in Horizontal Current Bipolar Transistor (HCBT) technology. The maximum IIP3 of 17.7 dBm at mixer current of 9.2 mA and conversion gain of -5 dB are achieved. Three different HCBT structures are used in a mixer design to examine the effect of process parameters on mixer linearity. The main effect on the linearity has the n-collector doping profile since it governs the onset of Kirk effect. The improvement of 6 dB in IIP3 can be achieved by using the optimum HCBT structure, if switching quad transistors operate at or near the high current region. The circuit model parameters of three HCBT structures are extracted, accurately reproducing the measured device and circuit data.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb