Pregled bibliografske jedinice broj: 651536
Examination of Horizontal Current Bipolar Transistor (HCBT) with Double and Single Polysilicon Region
Examination of Horizontal Current Bipolar Transistor (HCBT) with Double and Single Polysilicon Region // Proceedings of the 2012 Bipolar/BiCMOS Circuits and Technology Meeting
Portland (OR), Sjedinjene Američke Države: Institute of Electrical and Electronics Engineers (IEEE), 2012. str. 5-8 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Examination of Horizontal Current Bipolar Transistor (HCBT) with Double and Single Polysilicon Region
Autori
Suligoj, Tomislav ; Koričić, Marko ; Mochizuki, Hidenori ; Morita, So-ichi ; Shinomura, Katsumi ; Imai, Hisaya
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 2012 Bipolar/BiCMOS Circuits and Technology Meeting
/ - : Institute of Electrical and Electronics Engineers (IEEE), 2012, 5-8
Skup
Bipolar/BiCMOS Circuits and Technology Meeting
Mjesto i datum
Portland (OR), Sjedinjene Američke Države, 30.09.2012. - 03.10.2012
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
BiCMOS integrated circuits; Bipolar transistors; HF radio communication; Horizontal Current Bipolar Transistor
Sažetak
Horizontal Current Bipolar Transistor (HCBT) with implanted n+ collector (single-poly HCBT) has a higher fT and fmax by 50 % and 36 %, respectively, comparing to HCBT with polysilicon n+ collector (double-poly HCBT). The physical mechanisms responsible for the improvement of fT and fmax of single-poly HCBT are examined by the measurements of transistors, test structures and by simulations. Besides the current crowding effect, it is shown that RC dominantly limits fT in double-poly HCBT. The dominant component of RC is identified to be the resistance of the interface oxide between the n+ polysilicon and the n-hill collector regions.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
