Pregled bibliografske jedinice broj: 641957
Some physical problems in preparation and analysis of heavily boron and phosphorus doped polysilicon thin films
Some physical problems in preparation and analysis of heavily boron and phosphorus doped polysilicon thin films // Proceedings of MIPRO 2013, 36st international convention on information and communication technology, elecronics and microelectronics, May 20-24, 2013 / Biljanović, Petar ; Skala, Karolj (ed) (ur.).
Opatija, 2013. str. 27-32 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 641957 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Some physical problems in preparation and analysis of heavily boron and phosphorus doped polysilicon thin films
Autori
Očko, Miroslav ; Žonja, Sanja ; Ivanda, Mile
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of MIPRO 2013, 36st international convention on information and communication technology, elecronics and microelectronics, May 20-24, 2013
/ Biljanović, Petar ; Skala, Karolj (ed) - Opatija, 2013, 27-32
Skup
MIPRO 2013, 36st international convention on information and communication technology, elecronics and microelectronics, May 20-24, 2013
Mjesto i datum
Opatija, Hrvatska, 20.05.2013. - 24.05.2013
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Si:B; Si:P; preparation
Sažetak
We discuss problems in the preparation and analysis of the solid solution phase in the case of heavily phosphorus and boron doped polycrystalline silicon. Some currently used methods and the technology of polysilicon thin films preparation are presented. Based on and afore these discussions, we propose a process of preparation of a good quality heavily boron and phosphorus doped silicon thin film samples. The characterisation, with some new methods of characterisations, and the investigation of the stability of such obtained samples are presented. It was also indicated that the problem of the determination of the current carrier concentration is not yet solved even in the heavily doped, metallic, regime in polysilicon.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
035-0352827-2841 - Materijali sa elektronskom strukturom modeliranom modernim tehnikama priprave (Aviani, Ivica, MZOS ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Ivanda, Mile, MZOS ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb
