Influence of annealing conditions on the structural and photoluminescence properties of Ge quantum dot lattices in a continuous Ge + Al2O3 film

Buljan, Maja; Radić, Nikola; Bogdanović- Radović, Ivančica; Siketić, Zdravko; Salamon, Krešimir; Jerčinović, Marko; Ivanda, Mile; Dražić, Goran; Bernstorff, Sigrid

doi:10.1002/pssa.201200961

Pregled bibliografske jedinice broj: 633560

Influence of annealing conditions on the structural and photoluminescence properties of Ge quantum dot lattices in a continuous Ge + Al2O3 film

Buljan, Maja; Radić, Nikola; Bogdanović- Radović, Ivančica; Siketić, Zdravko; Salamon, Krešimir; Jerčinović, Marko; Ivanda, Mile; Dražić, Goran; Bernstorff, Sigrid;

Influence of annealing conditions on the structural and photoluminescence properties of Ge quantum dot lattices in a continuous Ge + Al2O3 film // Physica status solidi. A, Applications and materials science, 210 (2013), 8; 1516-1521 doi:10.1002/pssa.201200961 (međunarodna recenzija, članak, znanstveni)

CROSBI ID: 633560 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Influence of annealing conditions on the structural and photoluminescence properties of Ge quantum dot lattices in a continuous Ge + Al2O3 film

Autori
Buljan, Maja ; Radić, Nikola ; Bogdanović- Radović, Ivančica ; Siketić, Zdravko ; Salamon, Krešimir ; Jerčinović, Marko ; Ivanda, Mile ; Dražić, Goran ; Bernstorff, Sigrid ;

Izvornik
Physica status solidi. A, Applications and materials science (1862-6300) 210 (2013), 8; 1516-1521

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
alumina; Ge quantum dots; photoluminescence; self-assembly

Sažetak
We investigate the structural and photoluminescence (PL) properties of regularly ordered lattices of Ge quantum dots (QDs) formed by self-assembly in a thick film of Ge + Al2O3 mixture. The effects of annealing at different temperatures and different annealing environments (vacuum and air) are studied. We show that the regular ordering of QDs remains unchanged for annealing up to 800 oC in vacuum, while it is preserved up to 700 oC when annealing is performed in air. The inner/ crystalline structure of Ge QDs and their shape depend on the annealing conditions. The crystalline grains of g-Al2O3 form in the initially amorphous Al2O3 matrix after annealing at 800 oC. The PL spectra are found to consist of two main contributions, one from the matrix and the other from Ge QDs. Both contributions depend strongly on the annealing conditions.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA

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