Pregled bibliografske jedinice broj: 606411
Radiation hardness of single crystal CVD diamond detector tested with MeV energy ions
Radiation hardness of single crystal CVD diamond detector tested with MeV energy ions // Diamond and related materials, 31 (2013), 65-71 doi:10.1016/j.diamond.2012.11.002 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 606411 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Radiation hardness of single crystal CVD diamond detector tested with MeV energy ions
Autori
Zamboni, Ivana ; Pastuović, Željko ; Jakšić, Milko
Izvornik
Diamond and related materials (0925-9635) 31
(2013);
65-71
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
single crystal CVD diamond detector; radiation hardness; ion micro-beam; IBIC; charge collection efficiency
Sažetak
The spectroscopic properties of a commercial high purity single crystal diamond detector (1 mm^2 area, 500 μm thickness) have been studied using focused ion beams (H, He and C ions) in the MeV energy range. A measured relative energy resolution of 1.3% (FWHM = 25 keV) for the detection of 2 MeV protons demonstrated a good spectroscopic performance of the CVD diamond device, which makes it useful for the detection of light ions or atoms. To test the radiation hardness of the diamond detector, it was selectively irradiated with a 6.5 MeV focused carbon beam up to a fluence of 1011 ions/cm^2. Reliable measurement of the ion fluence was accomplished by means of the microprobe single ion technique IBIC (ion beam induced charge). After irradiations that produced selectively damaged regions in the diamond detector, low current mode IBIC microscopy has been performed to measure the degradation of the charge collection efficiency (CCE). In order to get a better understanding of the detector performance after irradiation, different ions with the end of a range smaller, equal and larger than the extend of the damaged layer were used as IBIC probes. The same experimental procedure of irradiation and IBIC microscopy has been performed on a detector grade silicon PIN diode in order to directly compare the radiation hardness of diamond and silicon. The presented results show that the single crystal CVD diamond is less radiation hard for the spectroscopy of short range heavy ions compared to the high resistivity silicon, which is contrary to the results obtained for diamond detectors exposed to the high energy particles.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
098-1191005-2876 - Procesi interakcije ionskih snopova i nanostrukture (Jakšić, Milko, MZOS ) ( CroRIS)
Ustanove:
Institut "Ruđer Bošković", Zagreb
Poveznice na cjeloviti tekst rada:
Pristup cjelovitom tekstu rada doi dx.doi.org www.sciencedirect.comCitiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus