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Pregled bibliografske jedinice broj: 605359

Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration


Koričić, Marko; Suligoj, Tomislav; Morita, So-ichi; Mochizuki, Hidenori; Shinomura, Katsumi; Imai, Hisaya
Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration // IEEE transactions on electron devices, 59 (2012), 12; 3647-3650 doi:10.1109/TED.2012.2216881 (međunarodna recenzija, članak, znanstveni)


CROSBI ID: 605359 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration

Autori
Koričić, Marko ; Suligoj, Tomislav ; Morita, So-ichi ; Mochizuki, Hidenori ; Shinomura, Katsumi ; Imai, Hisaya

Izvornik
IEEE transactions on electron devices (0018-9383) 59 (2012), 12; 3647-3650

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
BiCMOS technology; charge sharing; fully depleted collector; high-voltage bipolar transistors; horizontal current bipolar transistor (HCBT)

Sažetak
Fabrication of a novel high-voltage double-emitter horizontal current bipolar transistor (HCBT) structure integrated with the standard 0.18-μm CMOS and high-speed HCBT is presented. The device takes advantage of 3-D collector charge sharing to achieve full depletion of the intrinsic collector region and to limit the electric field at the base–collector junction. Transistors with BVCEO = 12.6 V, fT · BVCEO = 160 GHz · V, and β ·VA = 28 700 V are demonstrated. The device is fabricated in HCBT BiCMOS process flow without the use of additional lithography masks and represents a zero-cost solution for integration of a high-voltage bipolar device.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Marko Koričić (autor)

Avatar Url Tomislav Suligoj (autor)

Poveznice na cjeloviti tekst rada:

doi ieeexplore.ieee.org

Citiraj ovu publikaciju:

Koričić, Marko; Suligoj, Tomislav; Morita, So-ichi; Mochizuki, Hidenori; Shinomura, Katsumi; Imai, Hisaya
Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration // IEEE transactions on electron devices, 59 (2012), 12; 3647-3650 doi:10.1109/TED.2012.2216881 (međunarodna recenzija, članak, znanstveni)
Koričić, M., Suligoj, T., Morita, S., Mochizuki, H., Shinomura, K. & Imai, H. (2012) Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration. IEEE transactions on electron devices, 59 (12), 3647-3650 doi:10.1109/TED.2012.2216881.
@article{article, author = {Kori\v{c}i\'{c}, Marko and Suligoj, Tomislav and Morita, So-ichi and Mochizuki, Hidenori and Shinomura, Katsumi and Imai, Hisaya}, year = {2012}, pages = {3647-3650}, DOI = {10.1109/TED.2012.2216881}, keywords = {BiCMOS technology, charge sharing, fully depleted collector, high-voltage bipolar transistors, horizontal current bipolar transistor (HCBT)}, journal = {IEEE transactions on electron devices}, doi = {10.1109/TED.2012.2216881}, volume = {59}, number = {12}, issn = {0018-9383}, title = {Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration}, keyword = {BiCMOS technology, charge sharing, fully depleted collector, high-voltage bipolar transistors, horizontal current bipolar transistor (HCBT)} }
@article{article, author = {Kori\v{c}i\'{c}, Marko and Suligoj, Tomislav and Morita, So-ichi and Mochizuki, Hidenori and Shinomura, Katsumi and Imai, Hisaya}, year = {2012}, pages = {3647-3650}, DOI = {10.1109/TED.2012.2216881}, keywords = {BiCMOS technology, charge sharing, fully depleted collector, high-voltage bipolar transistors, horizontal current bipolar transistor (HCBT)}, journal = {IEEE transactions on electron devices}, doi = {10.1109/TED.2012.2216881}, volume = {59}, number = {12}, issn = {0018-9383}, title = {Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration}, keyword = {BiCMOS technology, charge sharing, fully depleted collector, high-voltage bipolar transistors, horizontal current bipolar transistor (HCBT)} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Citati:





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