Pregled bibliografske jedinice broj: 605270
Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method
Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method // Croatica chemica acta, 85 (2012), 1; 91-96 doi:10.5562/cca1969 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 605270 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method
Autori
Ristić, Davor ; Ivanda, Mile ; Furić, Kresimir ; Chiasera, Alessandro ; Moser, Enrico ; Ferrari, Maurizio
Izvornik
Croatica chemica acta (0011-1643) 85
(2012), 1;
91-96
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
LPCVD; silicon; thermal decomposition; thin films
Sažetak
Silicon-rich oxide (SiOx, 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 °C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100 °C to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Ivanda, Mile, MZOS ) ( CroRIS)
Ustanove:
Institut "Ruđer Bošković", Zagreb
