Pregled bibliografske jedinice broj: 590877
Role of the substrate and the temperature of deposition on the properties of the Ta<sub>x</sub>N thin films
Role of the substrate and the temperature of deposition on the properties of the TaxN thin films // MIPRO 2012, 35th Jubilee International Convention on Information and Communication Technology, Electronics and Microelectronics
Opatija, Hrvatska, 2012. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 590877 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Role of the substrate and the temperature of deposition on the properties of the Ta<sub>x</sub>N thin films
Autori
Očko, Miroslav ; Žonja, Sanja ; Ivanda, Mile
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Skup
MIPRO 2012, 35th Jubilee International Convention on Information and Communication Technology, Electronics and Microelectronics
Mjesto i datum
Opatija, Hrvatska, 21.05.2012. - 25.05.2012
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Ta<sub>x</sub>N; substrate; sapphire; SiO<sub>2</sub>; Raman spectroscopy; resistivity
Sažetak
We present an interim report on the investigations of the Ta<sub>x</sub>N thin films deposited on the (100) Si wafers coated with a 140-nm thermal SiO<sub>2</sub> layer. Our conclusions are based on the room temperature sheet resistance measurements, transport properties measurements from helium up to room temperature and on the Raman spectra analysis of the investigated series. In particular, we discuss a nonmonotonous concentration dependence of transport properties. This behaviour we attribute to a local minimum in the density of electronic states at the Fermi level calculated for the intermetallic Ta<sub>4</sub>N<sub>5</sub> [1]. Such behaviour was not observed in other investigations on the transport properties of TaxN found in literature. Also our Raman spectra show some differences compared to other Raman investigations on Ta<sub>x</sub>N. We ascribe these and other differences discussed to the substrate properties which were used in the preparation of these thin films. The overall properties of the Ta<sub>x</sub>N deposited on the oxidized Si wafers are compared to the properties of the Ta<sub>x</sub>N thin films deposited on sapphire.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Elektrotehnika
POVEZANOST RADA
Projekti:
035-0352827-2841 - Materijali sa elektronskom strukturom modeliranom modernim tehnikama priprave (Aviani, Ivica, MZOS ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Ivanda, Mile, MZOS ) ( CroRIS)
Ustanove:
Institut za fiziku, Zagreb,
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb
