Preparation of regularly ordered Ge quantum dot lattices in amorphous matrices

Buljan, Maja; Desnica, Uroš V.; Bogdanović-Radović, Ivančica; Radić, Nikola; Ivanda, Mile; Dražić, Goran; Bernstorff, Sigrid; Holý, V.

doi:10.1016/j.vacuum.2011.07.032

Pregled bibliografske jedinice broj: 589668

Preparation of regularly ordered Ge quantum dot lattices in amorphous matrices

Buljan, Maja; Desnica, Uroš V.; Bogdanović-Radović, Ivančica; Radić, Nikola; Ivanda, Mile; Dražić, Goran; Bernstorff, Sigrid; Holý, V.

Preparation of regularly ordered Ge quantum dot lattices in amorphous matrices // Vacuum, 86 (2012), 6; 733-736 doi:10.1016/j.vacuum.2011.07.032 (međunarodna recenzija, članak, znanstveni)

CROSBI ID: 589668 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Preparation of regularly ordered Ge quantum dot lattices in amorphous matrices

Autori
Buljan, Maja ; Desnica, Uroš V. ; Bogdanović-Radović, Ivančica ; Radić, Nikola ; Ivanda, Mile ; Dražić, Goran ; Bernstorff, Sigrid ; Holý, V.

Izvornik
Vacuum (0042-207X) 86 (2012), 6; 733-736

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Ge quantum dots ; self-assembly ; Ion beam irradiation ; GISAXS

Sažetak
We compare structural and optical properties of Ge quantum dot lattices in amorphous silica matrix obtained by two recently published techniques for the preparation of regularly ordered quantum dot lattices in amorphous matrices. The first technique is self-ordering growth of (Ge þ SiO2)/SiO2 multilayer at an elevated substrate temperature where diffusion and surface morphology effects drive the selfordering. The second one is irradiation of (Ge þ SiO2)/SiO2 multilayer by oxygen ions. The multilayer used for the irradiation is grown at room temperature in this case, resulting with no Ge clusters after the deposition process. The irradiation causes clustering of Ge and ordering of Ge quantum dots in the irradiation direction. We show that the size of the dots and their arrangement can be easily manipulated by the preparation parameters. The structural properties of the films prepared by these methods affect the quantum confinement of the charge carriers which is visible in the absorption properties of the films.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA

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