C–V and DLTS studies of radiation induced Si–SiO2 interface defects

Capan, Ivana; Janicki, Vesna; Jaćimović, Radojko; Pivac, Branko

doi:10.1016/j.nimb.2011.08.065

Pregled bibliografske jedinice broj: 581415

C–V and DLTS studies of radiation induced Si–SiO2 interface defects

Capan, Ivana; Janicki, Vesna; Jaćimović, Radojko; Pivac, Branko

C–V and DLTS studies of radiation induced Si–SiO2 interface defects // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 282 (2012), 1; 59-62 doi:10.1016/j.nimb.2011.08.065 (međunarodna recenzija, članak, znanstveni)

CROSBI ID: 581415 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
C–V and DLTS studies of radiation induced Si–SiO2 interface defects

Autori
Capan, Ivana ; Janicki, Vesna ; Jaćimović, Radojko ; Pivac, Branko

Izvornik
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (0168-583X) 282 (2012), 1; 59-62

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
interface ; radiation ; defects ; C–V ; DLTS

Sažetak
Interface traps at the Si–SiO2 interface have been and will be an important performance limit in many (future) semiconductor devices. In this paper, we present a study of fast neutron radiation induced changes in the density of Si–SiO2 interface-related defects. Interface related defects (Pb centers) are detected before and upon the irradiation. The density of interface-related defects is increasing with the fast neutron fluence.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA

Projekti:
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( CroRIS)
098-0000000-3191 - Optička svojstva nanostrukturnih slojeva (Zorc, Hrvoje, MZOS ) ( CroRIS)

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Ivana Capan (autor)