Naslov
Boron-layer silicon photodiodes for high-efficiency low-energy electron detection

Autori
Šakić, Agata ; Nanver, Lis K. ; Scholtes Tom L.M. ; Heerkensa, Carel Th.H. ; Knežević, Tihomir ; Van Veen, Gerard ; Kooijman, Kees ; Vogelsang, Patrick

Izvornik
Solid-state electronics (0038-1101) 65/66 (2011); 38-44

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
silicon photodiodes; electron detection; low-energy electrons; boron deposition; ultrashallow junctions; responsivity; electron signal gain; electron irradiation; dark current degradation

Sažetak
Silicon photodiodes for use as low-energy electron detectors have been fabricated using a pure-boron technology to form the p+-anode region. The diode I–V characteristics are ideal and uniform over the wafer with low dark currents in the range of 0.6 pA/mm2. An extremely small thickness of the front-entrance window dead layers was achieved for a 1.8 nm B-layer deposition at 700 °C. All other processing layers on the photosensitive surface were removed using selective wet-etching to the B-layer, a process which is studied here with respect to residues and pitting effects that can result from the etching of Al to the B-layer. For the most optimal photodiode, a high relative electron signal gain is obtained: 60% at 500 eV, and 74% at 1 keV. The degradation of the dark current of B-layer photodiodes is examined for 10-min-long irradiation with 1–25 keV electron energies and stable performance is observed provided that the perimeter isolation-oxide is not exposed.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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