Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate

Buljan, Maja; Grenzer, J.; Holý, V.; Radić, Nikola; Mišić-Radić, Tea; Levichev, S.; Bernstorff, S.; Pivac, Branko; Capan, Ivana

doi:10.1063/1.3504249

Pregled bibliografske jedinice broj: 549777

Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate

Buljan, Maja; Grenzer, J.; Holý, V.; Radić, Nikola; Mišić-Radić, Tea; Levichev, S.; Bernstorff, S.; Pivac, Branko; Capan, Ivana

Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate // Applied physics letters, 97 (2010), 16; 63117-63119 doi:10.1063/1.3504249 (međunarodna recenzija, članak, znanstveni)

CROSBI ID: 549777 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate

Autori
Buljan, Maja ; Grenzer, J. ; Holý, V. ; Radić, Nikola ; Mišić-Radić, Tea ; Levichev, S. ; Bernstorff, S. ; Pivac, Branko ; Capan, Ivana

Izvornik
Applied physics letters (0003-6951) 97 (2010), 16; 63117-63119

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
AFM ; charge trapping ; Ge+SiO2 bilayer films

Sažetak
We report on structural properties and charge trapping in [(Ge+SiO2)/SiO2]×2 films deposited by magnetron sputtering on a periodically corrugated-rippled substrate and annealed in vacuum and forming gas. The rippled substrate caused a self-ordered growth of Ge quantum dots, while annealing in different environments enabled us to separate charge trapping in quantum dots from the trapping at the dot-matrix and matrix-substrate interfaces. We show that the charge trapping occurs mainly in Ge quantum dots in the films annealed in the forming gas, while Si–SiO2 interface trapping is dominant for the vacuum annealed films.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Kemija

POVEZANOST RADA

Projekti:
MZOS-098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( CroRIS)
MZOS-098-0982934-2744 - Površinske sile na atomskoj skali u istraživanju mora i nanotehnologiji (Svetličić, Vesna, MZOS ) ( CroRIS)
MZOS-098-0982886-2895 - Novi amorfni i nanostrukturirani tankoslojni materijali (Radić, Nikola, MZOS ) ( CroRIS)

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Nikola Radić (autor)