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Pregled bibliografske jedinice broj: 529952

Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm

Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav
Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.).
Tempe (AZ): Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 156-157 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

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Naslov
Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm

Autori
Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 2011 IEEE International SOI Conference / W. Xiong - Tempe (AZ) : Institute of Electrical and Electronics Engineers (IEEE), 2011, 156-157

ISBN
978-1-61284-759-7

Skup
2011 IEEE International SOI Conference

Mjesto i datum
Tempe (AZ), Sjedinjene Američke Države, 03.10.2011. - 06.10.2011

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
indium-gallium-arsenide (InGaAs); physics-based modeling; electron mobility; quantum confinement; effective mass; bandstructure effects; ultra-thin body; FinFET; silicon-on-insulator (SOI)

Sažetak
Behavior of electron mobility in UTB InGaAs-OI MOSFETs is studied by physics-based modeling. We have shown that UTB InGaAs-OI devices outperform Silicon-OI MOSFETs only for TS > 6.2 nm, due to high SR scattering. Therefore, improvement of interface quality remains crucial to utilize high electron mobility in extremely scaled InGaAs-OI devices.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Vladimir Jovanović (autor)

Avatar Url Tomislav Suligoj (autor)

Avatar Url Mirko Poljak (autor)

Citiraj ovu publikaciju:

Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav
Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.).
Tempe (AZ): Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 156-157 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Poljak, M., Jovanović, V. & Suligoj, T. (2011) Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm. U: W. Xiong (ur.)Proceedings of the 2011 IEEE International SOI Conference.
@article{article, author = {Poljak, Mirko and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, year = {2011}, pages = {156-157}, keywords = {indium-gallium-arsenide (InGaAs), physics-based modeling, electron mobility, quantum confinement, effective mass, bandstructure effects, ultra-thin body, FinFET, silicon-on-insulator (SOI)}, isbn = {978-1-61284-759-7}, title = {Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm}, keyword = {indium-gallium-arsenide (InGaAs), physics-based modeling, electron mobility, quantum confinement, effective mass, bandstructure effects, ultra-thin body, FinFET, silicon-on-insulator (SOI)}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {Tempe (AZ), Sjedinjene Ameri\v{c}ke Dr\v{z}ave} }
@article{article, author = {Poljak, Mirko and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, year = {2011}, pages = {156-157}, keywords = {indium-gallium-arsenide (InGaAs), physics-based modeling, electron mobility, quantum confinement, effective mass, bandstructure effects, ultra-thin body, FinFET, silicon-on-insulator (SOI)}, isbn = {978-1-61284-759-7}, title = {Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm}, keyword = {indium-gallium-arsenide (InGaAs), physics-based modeling, electron mobility, quantum confinement, effective mass, bandstructure effects, ultra-thin body, FinFET, silicon-on-insulator (SOI)}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {Tempe (AZ), Sjedinjene Ameri\v{c}ke Dr\v{z}ave} }

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