Naslov
X-ray diffraction study of semiconducting compounds (AxB(1-x))2(CxD(1-x))3 ; A, B = Al, Ga, In ; C, D = S, Se, Te.

Autori
Popović, Stanko ; Čelustka, Branko ; Gržeta, Biserka ; Tonejc, Antun ; Etlinger, Božidar ; Desnica, Dunja

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
Sixth European crysallographic meeting, Book of abstract / - Barcelona : International Union of Crystallography, 1980

Skup
Sixth European crysallographic meeting, Barcelona, Spain July 28 - August 1, 1980

Mjesto i datum
Barcelona, Španjolska, 28.07.1980. - 01.08.1980

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
diffraction data; compound III2VI3

Sažetak
The title compounds, studied systematically in the last decade, may be treated as inferred from the ZnS, zincblende (ZB) and wurtzite (W), structural types, the metal ions occupying two thirds of the available positions. The ordering of the metal ions in tetrahedral and octahedral interstices yieldsvarius polytypes, superstructures and OD-structures, depending on the synthesis, composition and temperature. The systems studied by X-ray diffraction (crystal data, thermal expansion, phase diagrams, diffraction broadening ; an original Fortran program for calculation of interplanar spacings, in accordance with the conditions for possible reflexions, facilitated the the indexing of diffractions patterns) and other methods (electrical, DTA, electron probe microanalysis of the following semiconducting compounds: In2Se3, (GaxIn(1-x))2Se3, (AlxIn(1-x))2Se3, (AlxIn(1-x))2S3, (GaxIn81-x))2(SexTe(1-x))3.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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