Pregled bibliografske jedinice broj: 509562
Effect of Dangling Bonds on Transient Response of p- i-n a-Si:H Photodiode
Effect of Dangling Bonds on Transient Response of p- i-n a-Si:H Photodiode // Informacije MIDEM, 41 (2011), 3; 161-167 (međunarodna recenzija, članak, znanstveni)
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Naslov
Effect of Dangling Bonds on Transient Response of p- i-n a-Si:H Photodiode
Autori
Gradišnik, Vera ; Linić, Antonio ; Šverko, Mladen
Izvornik
Informacije MIDEM (0352-9045) 41
(2011), 3;
161-167
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
amorphous silicon; transient response; trapping and recombination; photodiode
Sažetak
The transient photocurrent of a-Si:H p-i-n photodiode as a three-color detector under simultaneously pulsed visible light illumination and forward voltage pulse at low reverse bias voltage and low frequency conditions were studied. The characteristic transient response properties are attributed to the effect of the spatial distribution of defect states in the i-layer. They act temporally as recombination or generation centers. The results are useful in directing further investigation of the observed effect regard light illumination energy with application in color sensor in an active pixel sensor.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
Napomena
Rad objavljen nakon obustavljene financijske podrške projekta.
POVEZANOST RADA
Projekti:
069-0000000-3263 - Kontinuirana detekcije boja i tehnika karakterizacije piksela senzora slike
Ustanove:
Tehnički fakultet, Rijeka
Profili:
Vera Gradišnik
(autor)
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- SCI-EXP, SSCI i/ili A&HCI
Uključenost u ostale bibliografske baze podataka::
- INSPEC
- COBISS
- ISI Sci Search
- Research Alert
- Material Citation Index
