Naslov
Optimization of Collector and Base Regions of a Novel Horizontal Current Bipolar Transistor (HCBT) Structure

Autori
Suligoj, Tomislav ; Koričić, Marko

Izvornik
Research on the Novel Horizontal Current Bipolar Transistor (HCBT) Structures

Vrsta, podvrsta
Ostale vrste radova, ekspertiza

Godina
2009

Ključne riječi
bipolar transistor; HCBT; semiconductor technology; BiCMOS

Sažetak
The implantation and annealing parameters for the fabrication of collector region are varied in order to obtain an optimum trade-off between cut-off frequency, breakdown voltage and dispersion of current gain with respect to the variation of polysilicon thickness. The intrinsic and extrinsic base ion implantation parameters are also varied to achieve an optimum trade-off between cut-off frequency, breakdown voltage and Early voltage of HCBT.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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