Naslov
Characterisation of low-tenperature PECVD silicon dioxide films

Autori
Deenapanray, P.N.K. ; Lengyel, J. ; Tan, H.H. ; Petravić, Mladen ; Durandet, A. ; Williams, J.S. ; Jagadish, C.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Materials Research Society Symphosium Proceedings Vol.555 / M. Pickering, B.W. Sheldon, W.Y. Lee, R.N. Johnson - Warrendale (PA) : MRS, 1999

Skup
1998 MRS Fall Meeting, Properties and Processing of Vapor- Deposited Coatings

Mjesto i datum
Boston (MA), Sjedinjene Američke Države, 30.11.1998. - 04.12.1998

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
PECVD; silicon dioxide

Sažetak
Silicon dioxide (SiO, , x < 2) films were plasma-deposited at a pressure of 1 Torr and low substrate temperature (• 300°C) by N20/SiH4 flow. Deposition rates in the range 20-50 nm/min were achieved at 20 W rf source power. Deep level transient spectroscopy showed that no significant defect levels were introduced in the Si substrates at this low source power. The effects of flowrate ratio, R, of N20/SiH4 and substrate temperature on film properties were determined using ex-situ spectroscopic ellipsometry, prism coupler, Rutherford backscattering spectroscopy (RBS), secondary ion mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR) and chemical etching (P-etch). Near-stoichiometric oxide layers were obtained for R Ž 1, and a decrease in deposition rate with increasing R was observed. The increase in refractive index for R • 1 has been correlated to compositional changes in the thin films. Complementary results were obtained from FFIR and P-etch measurements. Nitrogen was present in the films deposited using R = 4.4, for which the depostion rate showed an Arrhenius-like relationship to substrate temperature. No OH- related bands were observed in our films

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA