Pregled bibliografske jedinice broj: 463314
The influence of cavities and point defects on Cu gettering and B diffusion in Si'
The influence of cavities and point defects on Cu gettering and B diffusion in Si' // Materials Research Society Symposium Proceedings Vol.469 / S.Coffa, T.Diaz de la Rubia, P.A.Stolk, C.S.Rafferty (ur.).
Pittsburgh (PA): MRS, 1997. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
The influence of cavities and point defects on Cu gettering and B diffusion in Si'
Autori
Wong-Leung, J. ; Williams, J.S. ; Petravić, Mladen
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Materials Research Society Symposium Proceedings Vol.469
/ S.Coffa, T.Diaz de la Rubia, P.A.Stolk, C.S.Rafferty - Pittsburgh (PA) : MRS, 1997
Skup
1997 MRS Sring Meeting, Defects and Diffusion in Silicon Processing
Mjesto i datum
San Francisco (CA), Sjedinjene Američke Države, 01.04.1997. - 04.04.1997
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
cavities; point defects; gettering; Si
Sažetak
Cavities, formed in Si by hydrogen implantation and subsequent annealing, can provide ideal gettering sites for metal impurities. In this study, we have observed large differences in the accumulation of Cu at cavities depending on whether Cu was introduced into Si during cavity formation or into wafers with pre-formed cavities. The observed behaviour is consistent with a high flux of Si interstitials emitted during cavity formation which induce the dissolution of Cu3Si and the enhanced transport of Cu to cavities. In further studies, boron implantation was carried out into wafers containing pre-formed cavities and transient enhanced diffusion (TED) of boron was suppressed during subsequent annealing
Izvorni jezik
Engleski
Znanstvena područja
Fizika
