Pregled bibliografske jedinice broj: 463210
Electronic effects in sputtering of positive halogen ions from semiconductor surfaces
Electronic effects in sputtering of positive halogen ions from semiconductor surfaces // Secondary Ion Mass Spectrometry, SIMS X / A.Benninghoven, B.Hagenhoff and H.W.Werner (ur.).
Chichester: John Wiley & Sons, 1997. str. 239-244 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Electronic effects in sputtering of positive halogen ions from semiconductor surfaces
Autori
Petravić, Mladen ; Williams, J.S.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Secondary Ion Mass Spectrometry, SIMS X
/ A.Benninghoven, B.Hagenhoff and H.W.Werner - Chichester : John Wiley & Sons, 1997, 239-244
Skup
10th International Conference on Secondary Ion Mass Spectrometry, SIMS X
Mjesto i datum
Münster, Njemačka, 01.10.1995. - 06.10.1995
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
SIMS; electronic effects; oxygen beam
Sažetak
In this paper we report on evidence for the electronic effects in ion-stimulated ejection for appropriate ion species implanted into Si and GaAs by comparing the energy distributions of positive and negative ions emitted during either energetic ion bombardment (6-10 keV O2+) or low-energy electron bombardment (< 1KeV). A tentative explanation based on an interatomic Auger process is given for the ion-stimulated ejection and results are correlated with measurements of the positive secondary ion yield dependence on ionization potential.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
