Pregled bibliografske jedinice broj: 463196
Microstructure of irradiated silicon
Microstructure of irradiated silicon // Materials Research Society Symposium Proceedings Vol.373 / I.M. Robertson, L. E. Rehn, S.J. Zinkle, W. J. Phythian (ur.).
Pittsburgh (PA): MRS, 1995. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Microstructure of irradiated silicon
Autori
Williams, J.S. ; Wong-Leung, J. ; Goldberg, R.D. ; Petravić, Mladen
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Materials Research Society Symposium Proceedings Vol.373
/ I.M. Robertson, L. E. Rehn, S.J. Zinkle, W. J. Phythian - Pittsburgh (PA) : MRS, 1995
Skup
MRS 1994 Fall Meeting, Microstructure of Irradiated Materials
Mjesto i datum
Boston (MA), Sjedinjene Američke Države, 1994
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
microstructure; irradiated Si
Sažetak
This paper provides a brief overview of some issues relating to the microstructure of irradiated silicon which are of importance to the semiconductor industry. The nature of ion-induced disorder and conditions for amorphization are initially treated since the starting microstructure can strongly influence subsequent annealing behaviour, particularly removal of residual defects, dopant diffusion and electrical activation. The use of implantation-induced disorder as a means of removing metallic impurities, so called gettering, is also an issue of major current interest for improved performance of devices. Some new gettering results are discussed.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
