Pregled bibliografske jedinice broj: 463075
On the estimation of depth resolution durind SIMS profiling in GaAs and GaAs/AlGaAs structures
On the estimation of depth resolution durind SIMS profiling in GaAs and GaAs/AlGaAs structures // Secondary Ion Mass Spectrometry, SIMS IX / A.Benninghoven, Y.Nihei, R.Shimizu and H.W.Werner (ur.).
Chichester: John Wiley & Sons, 1994. str. 960-964 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
On the estimation of depth resolution durind SIMS profiling in GaAs and GaAs/AlGaAs structures
Autori
Petravić, Mladen ; Li, Gang
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Secondary Ion Mass Spectrometry, SIMS IX
/ A.Benninghoven, Y.Nihei, R.Shimizu and H.W.Werner - Chichester : John Wiley & Sons, 1994, 960-964
Skup
9th International Conference on Secondary Ion Mass Spectrometry, SIMS-IX
Mjesto i datum
Yokohama, Japan, 07.11.1993. - 12.11.1993
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
depth resolution; SIMS; GaAs; GaAs/AlGaAs
Sažetak
We have estimated broadening of sputter profiles for several elements in GaAs and GaAs/AlGaAs structures using a semi- empirical model developed recently by P.C.Zalm and C.J.Vriezema [1]. A unique feature of this model is that broadening does not depend on the primary ion type and it is only slightly influenced by the type of impurity investigated [1, 2]. An excellent agreement has been found between experimental data and theoretical predictions for both the Ar+ and Cs+ bombardment at 00-600 angle of incidence and energies in the 6-12keV interval.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
