Pregled bibliografske jedinice broj: 462042
Core ionization and ion ejection during SIMS analysis
Core ionization and ion ejection during SIMS analysis // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 64 (1992), 1-4; 659-662 doi:10.1016/0168-583X(92)95553-4 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 462042 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Core ionization and ion ejection during SIMS analysis
Autori
Petravić, Mladen ; Williams, J.S.
Izvornik
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (0168-583X) 64
(1992), 1-4;
659-662
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
ESD ; ion bombardment
Sažetak
Energy distributions of secondary ions emitted during either 10 keV O2+ or low-energy electron bombardment have been studied for different ion species implanted into silicon. Some elements such as F and Cl, which are among elements with the highest ionization potential, have been shown to exhibit close similarity between ion-induced and electron-induced energy distributions. This indicates the dominance of electron- mediated processes in ion-stimulated positive ion ejection. From threshold measurements of electron-stimulated desorption (ESD) for F+ and Cl+, an Auger-related process has been identified as a possible mechanism for ion-stimulated emission of positive secondary ions. These results are also correlated with measurements of the positive secondary ion yield dependence on ionization potential.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
