Pregled bibliografske jedinice broj: 461947
Desorption of positive and negative ions from SiO2/Si surfaces by electron excitation of core levels
Desorption of positive and negative ions from SiO2/Si surfaces by electron excitation of core levels // Physical review. B, Condensed matter, 48 (1993), 4; 2627-2631 doi:10.1103/PhysRevB.48.2627 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 461947 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Desorption of positive and negative ions from SiO2/Si surfaces by electron excitation of core levels
Autori
Petravić, Mladen
Izvornik
Physical review. B, Condensed matter (0163-1829) 48
(1993), 4;
2627-2631
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
ESD ; positive and negative ions
Sažetak
Electron-stimulated desorption of positive and negative oxygen ions and positive, multiply charged silicion inos from thin SiO2/Si film has been studied as a function of impact electron energy. Theresholds observed for O+ are correlated with core-level binding energies of substrate athoms. Desorption of negative ions closely follows threshold behaviors of posotive ions ; it is explained in terms of charge-exchange process in witch the outgoing positive ions (or neutrals) capture electrons in the surface region and desorb as negative ions. Desorption of multiply charged silicon ions is also related to creation of hole cores, but requires some additional, multielectron excitations.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
