Naslov
Conductivity in insulators due to implantation of conducting species

Autori
Prawer, S. ; Hoffman, A. ; Petravić, Mladen ; Kalish, R.

Izvornik
Journal of applied physics (0021-8979) 73 (1993), 8; 3841-3845

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
C implantation ; conductivity ; isolators
(C implantation ; conductivity ; isolator)

Sažetak
Control of the surface conductivity of insulators can be accomplished by high dose ion implantation of conductive species. The use of C!+ as the implant species is particularly interesting because C can either form electrically insulating sp3 bonds or electrically conducting sp” bonds. In the present work, fused quartz plates have been irradiated with 100 keV Cs ions to doses up to 1 X 1017 ions/cm’ at room temperature and at 200 “C. The ion beam induced conductivity was monitored in situ and was found to increase by up to 8 orders of magnitude for the ion dose range studied. Xe implantations over a similar range did not induce any changes in the conductivity showing that the increase in conductivity is caused by the presence of the C in the fused quartz matrix and not by damage. The conductivity, a, is found to vary with dose D as log u a D- 1’3 over a wide dose range, strongly supporting a hopping model for the conduction mechanism. The dependence of the conductivity on implantation temperature and on post-implantation annealing sheds light on the clustering of the C implants. The temperature dependence of the conductivity for the highest doses employed (1 x 1017 @/cm’) can be described very well by ln c~a T. This is a peculiar dependence which does not comply with any of the standard models for conduction.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA