Pregled bibliografske jedinice broj: 461784
Surface recession and oxidation of silicon during bombardment by low energy oxygen ions
Surface recession and oxidation of silicon during bombardment by low energy oxygen ions // Journal of applied physics, 76 (1994), 6; 3831-3834 doi:10.1063/1.357386 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 461784 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Surface recession and oxidation of silicon during bombardment by low energy oxygen ions
Autori
Svensson, Bengt G. ; Mohadjeri, Babak ; Petravić, Mladen
Izvornik
Journal of applied physics (0021-8979) 76
(1994), 6;
3831-3834
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
surface expansion ; ion bombardment ; oxidation
Sažetak
Vertical expansion of a silicon surface bombarded by 10 keV 0’ ions is demonstrated using surface stylus profilometry. The surface expands gradually as the incorporated oxygen concentration increases, and a maximum is obtained when the bombardment dose reaches the critical one for formation ‘of a continuous surface layer of SiOa. Through a combination of crater depth measurements and chemical etching the surface recession and the incorporation of oxygen are monitored as a function of bombardment dose. Comparison is made with calculations based on a model where simultaneous sputter erosion and surface swelling are taken into account. The surface swelling is assumed to be proportional to the retained oxygen dose. Experimentally determined sputtering yields are utilized in the calculations, and good agreement is shown with the measured data.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
