Pregled bibliografske jedinice broj: 461726
Depth resolution during sputter profiling of Si in GaAs
Depth resolution during sputter profiling of Si in GaAs // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85 (1994), 1-4; 388-390 doi:10.1016/0168-583X(94)95850-5 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 461726 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Depth resolution during sputter profiling of Si in GaAs
Autori
Petravić, Mladen
Izvornik
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (0168-583X) 85
(1994), 1-4;
388-390
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
sputter broadening ; SIMS ; GaAs
Sažetak
We have estimated broadening of sputter profiles for a monolayer of Si, buried in GaAs, under Ar+, Cs+ and 0: bombardment using the systematics observed in high-energy mixing experiments. Excellent agreement has been found between theoretical predictions and experimental data for all three types of primary ions. In the case of 0: bombardment, however, good agreement is only achieved by taking into account changes at the instantaneous surface induced by incorporation of oxygen during sputtering.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
