Pregled bibliografske jedinice broj: 461208
Segregation effects in SIMS profiling of impurities in silicon by low energy oxygen ions
Segregation effects in SIMS profiling of impurities in silicon by low energy oxygen ions // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118 (1996), 1-4; 151-155 doi:10.1016/0168-583X(96)00262-5 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 461208 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Segregation effects in SIMS profiling of impurities in silicon by low energy oxygen ions
Autori
Petravić, Mladen ; Svensson, Bengt Gunnar ; Williams, Jean Sebastien ; Glasko, J.M.
Izvornik
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (0168-583X) 118
(1996), 1-4;
151-155
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
SIMS ; oxygen ions ; segregation
Sažetak
Segregation of impurities in Si under oxygen ion bombardment has been studied using secondary ion mass spectrometry and high resolution Rutherford backscattering and channeling. Anomalously large broadening was observed under oxygen bombardment at angles of incidence < 30” from the surface normal. This broadening was found to be. correlated with the angular dependence for surface oxide formation, and is explained in terms of Gibbsian segregation, driven by the different heats of formation for SiO, and the oxide of the impurity. The extent of segregation, found to be larger for bombardment at elevated temperatures, is determined by the mobility of impurities in the oxide.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
