Pregled bibliografske jedinice broj: 461202
Electron stimulated desorption of negative and positive hydrogen ions from hydrogenated silicon surfaces
Electron stimulated desorption of negative and positive hydrogen ions from hydrogenated silicon surfaces // Physical review B : Condensed matter, 53 (1996), 11; 6996-6998 doi:10.1103/PhysRevB.53.6996 (međunarodna recenzija, članak, znanstveni)
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Naslov
Electron stimulated desorption of negative and positive hydrogen ions from hydrogenated silicon surfaces
Autori
Hoffman, Alon ; Petravić, Mladen
Izvornik
Physical review B : Condensed matter (0163-1829) 53
(1996), 11;
6996-6998
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
ESD; hydrogen ions; Si:H
Sažetak
Electron-stimulated desorption of negative and positive hydrogen ions from hydrogenated amorphous silicon (a-Si:H) surfaces has been studied as a function of incident electron energy. Well-defined thresholds for emitted ions are observed at electron energies close to Si core-level binding energies, suggesting that the core-level electronic transitions are most likely responsible for emission of both negative and positive hydrogen ions. In addition to thresholds, the negative-ion yield, studied from both a-Si:H and hydrogenated SiO2 surfaces, exhibits some resonantlike features, indicating that some other, multistep channels for negative-ion desorption may also be activated. It has been also suggested that negative-ion formation may follow emission of secondary electrons.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
