Naslov
Very high carbon d-doping concentration in AlxGa1-xAs grown by metal organic vapour phase epitaxy using trimethylaluminium as a doping precurso

Autori
Li, G. ; Petravić, Mladen ; Jagadish, C.

Izvornik
Journal of applied physics (0021-8979) 79 (1996); 3554-3559

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
C delta doping ; AlxGa1-xAs

Sažetak
Using trimethylaluminum (TMAI) or trimethylgallium (TMGa) as a doping precursor, carbon delta-doped AlxGa1-xAs has been grown in metalorganic vapor phase epitaxy. Compared to TMGa, TMAI exhibits very high carbon delta-doping efficiency. The best hole profile of carbon delta-doped Al0.3Ga0.7As grown at 580 degrees C using TMAI as a doping precursor has a peak hole density of 1.6x10(19) cm(-3) for a full width at half- maximum of 85 Angstrom with most of the incorporated carbon atoms being electrically active. When TMGa is used as the doping precursor, the hole density of carbon delta-doped AlxGa1-xAs significantly increases with an increase of the Al mole fraction. By comparison, the use of TMAI almost induces independence of the hole density on the Al mole fraction. The hole density of carbon delta-doped Al0.3Ga0.7As weakly increases when reducing the delta-doping temperature regardless of the doping precursors. The hole density of carbon delta-doped Al0.3Ga0.7As grown at 580 degrees C is proportionally associated with the moles of TMGa or TMAI totally input during a delta-doping step. Using heavily carbon delta-doped layers in Al0.3Ga0.7As, a carbon delta-doped pipi doping superlattice possessing a bulk-doped-like hole profile with an average hole density of 1.1x10(19) -3 is therefore demonstrated as an alternative with unique advantages over other cm conventional carbon bulk-doping approaches.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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