Naslov
Electrical activation of carbon delta-doped (Al, Ga)As grown by metalorganic vapour-phase epitaxy
(Electrical activation of carbon d-doped (Al, Ga)As grown by metal organic vapour-phase epitaxy)

Autori
Li, G. ; Petravić, Mladen ; Jagadish, C.

Izvornik
Journal of crystal growth (0022-0248) 173 (1997), 3-4; 302-306

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
C delta doping ; (Al ; Ga)As

Sažetak
Carbon delta-doped (Al, Ga)As was grown by metalorganic vapour-phase epitaxy using trimethylaluminium (TMAl) or trimethylgallium (TMGa) as a doping precursor. The best C delta-doped Al0.3Ga0.7As has a peak hole density of 1.6 x 10(19) (1.4 x 10(19) for GaAs) cm(-3) with a full hole profile width at half maximum of 85 Angstrom (84 Angstrom for GaAs). For C delta-doped Al0.3Ga0.7As grown at 630 degrees C, the use of TMGa as a doping precursor leads to both the sheet C atom density and the free hole density increasing with an increase in the total TMGa moles introduced during a delta- doping step. As a result, the electrical activation remains almost constant with the change of TMGa moles supplied. The sheet C atom density always increases with increasing supply of TMAl, but approaches its maximum value at an amount of TMAl of 6.4 x 10(-7) mol. The electrical activation reduces from > 90% to < 10% when the supply of TMAl increases from 2.1 x 10(-7) to 8 x 10(-7) mol. Regardless of the doping precursors, the hole density weakly decreases and the C atom density significantly increases with increasing growth temperature. Low growth temperatures are required for high electrical activation. Using optimised growth conditions, C delta-doped pipi doping superlattices with different average hole densities are fabricated to obtain C bulk-doped-like layers.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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