Pregled bibliografske jedinice broj: 461134
Evidence for the influence of thermal spikes on ion induced mixing in Si at energies between 3 and 300 keV
Evidence for the influence of thermal spikes on ion induced mixing in Si at energies between 3 and 300 keV // Journal of applied physics, 84 (1998), 9; 4809-4814 doi:10.1063/1.368722 (međunarodna recenzija, članak, znanstveni)
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Naslov
Evidence for the influence of thermal spikes on ion induced mixing in Si at energies between 3 and 300 keV
Autori
Cardenas, J. ; Svensson, B.G. ; Petravić, Mladen
Izvornik
Journal of applied physics (0021-8979) 84
(1998), 9;
4809-4814
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Ge ; B ; mixing ; Si ; SIMS
Sažetak
Broadening of Ge and B tracer profiles in Si during sputter depth profiling, using O-2(+), Ar+, Kr+, and Cs+ ions, has been accurately described using the diffusion approximation of ion induced atomic mixing. The model allows extraction of a parameter yielding the mixing efficiency as a function of deposited energy per unit length (F-D) and ion energy. The mixing parameter exhibits a linear dependence on F-D(3/2) at ion energies between 3 and 300 keV, which provides strong evidence for a dominating influence of thermal spikes on the mixing process.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
