Pregled bibliografske jedinice broj: 461122
Anodic-oxide induced intermixing in GaAs/AlGaAs quantum well and quantum wire structures
Anodic-oxide induced intermixing in GaAs/AlGaAs quantum well and quantum wire structures // Ieee journal of selected topics in quantum electronics, 4 (1998), 4; 629-635 doi:10.1109/2944.720473 (međunarodna recenzija, članak, znanstveni)
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Naslov
Anodic-oxide induced intermixing in GaAs/AlGaAs quantum well and quantum wire structures
Autori
Yuan, Shu ; Jagadish, Chennupati ; Kim, Yong ; Chang, Yong ; Tan, Hark Hoe ; Cohen, Richard M. ; Petravić, Mladen ; Dao, Lap Van ; Gal, Mike ; Chan, Michael C. Y. ; Li, E. Herbert ; O, Jeong-seok ; Zory, Peter S.
Izvornik
Ieee journal of selected topics in quantum electronics (1077-260X) 4
(1998), 4;
629-635
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
anodic oxidation ; GaAs-AlGaAs quantum wells ; intermixing
Sažetak
Anodic oxides of GaAs were shown to enhance the intermixing in GaAs-AlGaAs quantum wells (QW) during rapid thermal processing. Proximity of the anodic oxide to the QW has been shown to influence the photoluminescence (PL) energy shift due to intermixing. Anodic oxide induced intermixing has been used to enhance quantum- wire PL in the structures grown on V- groove patterned GaAs substrates, This has been attributed to enhanced lateral confinement in these structures. Injection of defects such as group-III vacancies or interstitials was considered to be driving force for the intermixing.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
