Naslov
Substrate orientation effect on Zn delta-doping in GaAs grown by metal organic vapour phase epitaxy
(Substrate orientation effect on Zn d-doping in GaAs grown by metal organic vapour phase epitaxy)

Autori
Li, G. ; Prince, K.E. ; Petravić, Mladen ; Chua, S.J. ; Jagadish, C.J.

Izvornik
Journal of crystal growth (0022-0248) 191 (1998), 3; 357-360

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
GaAs ; MOCVD ; Zn doping

Sažetak
The substrate orientation dependence of Zn incorporation on the nongrowing surface in the AsH3 containing ambient was investigated using Zn delta-doped layers in GaAs grown by metal organic vapour-phase epitaxy (MOVPE). We found that the Zn delta-doping concentration significantly decreases with an increase of the (1 0 0) off-angle towards (1 1 1)B along the [0 1 (1) over bar] direction. The Zn incorporation on the nongrowing As-terminated (1 1 1)B surface is negligible. A notable increase of the Zn incorporation was observed with increasing the (1 0 0) off-angle towards (1 1 1)A, while the maximum Zn delta-doping concentration was obtained on the (3 1 1)A surface. The Zn density decreases with a further increase in the (1 0 0) off-angle towards (1 1 1)A after (3 1 1)A. Based on the bonding configurations of the nongrowing surface, the possible mechanism of orientation effect on Zn incorporation is discussed.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA