Pregled bibliografske jedinice broj: 461115
On the segregation of metals during low energy oxygen bombardment of silicon
On the segregation of metals during low energy oxygen bombardment of silicon // Applied surface science, 135 (1998), 1-4; 200-204 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 461115 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
On the segregation of metals during low energy oxygen bombardment of silicon
Autori
Petravić, Mladen
Izvornik
Applied surface science (0169-4332) 135
(1998), 1-4;
200-204
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
segregation; dopants; Si; SIMS
Sažetak
Segregation of metal impurities in Si under oxygen ion bombardment has been studied using secondary ion mass spectrometry. A strong evidence has been found for the thermodynamic driving force for segregation. This includes segregation of metal atoms at both interfaces of a buried SiO2 layer and the 'antisegregation' behaviour of metal atoms having lower heats of oxide formation than Si. Segregation is enhanced at elevated temperatures when the metal diffusivity in amorphous Si is higher
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
