Naslov
Analysis of semiconductors by ion chaneling : applications and pitfalls

Autori
Williams, J.S. ; Conway, M. ; Davies, J.A. ; Petravić, Mladen ; Tan, H.H. ; Wong-Leung, J.

Izvornik
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (0168-583X) 136/138 (1998); 453-459

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
ion channelling; RBS

Sažetak
Ion channelling is a rapid and powerful method for determining the perfection of single crystals and, more specifically, is sensitive to departures in the perfect arrangement of atoms in a single crystal lattice. This paper examines three of the major applications of channelling, namely lattice disorder, atom location of foreign species within a host matrix and improved sensitivity for thin film analysis. Examples are given in these three areas covering build up of implantation damage in GaN, SiO2? and Si3N4 formation during SIMS analysis and atom location of Au at nanocavities in Si. These examples are shown not only to illustrate applications but also to highlight pitfalls in using channelling/Rutherford backscattering analysis of semiconductors. Such pitfalls can give rise to significant errors when the channelling stopping power alters the depth scale for profiling of damage or impurities and/or changes the energy window for atom location. Channelling oscillations can also influence the ability to obtain random spectra and interpret near-surface disorder vs, depth profiles

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA