Pregled bibliografske jedinice broj: 461100
The influence of cavities and point defects on boron diffusion in silicon
The influence of cavities and point defects on boron diffusion in silicon // Applied physics letters, 72 (1998), 19; 2418-2420 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 461100 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
The influence of cavities and point defects on boron diffusion in silicon
Autori
Wong-Leung, J. ; Williams, J.S. ; Petravić, Mladen
Izvornik
Applied physics letters (0003-6951) 72
(1998), 19;
2418-2420
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Si; cavities; B; hydrogen; SIMS; TED
Sažetak
Cavities, formed in Si by hydrogen implantation and subsequent annealing, can provide strong sinks for metal interstitials and are ideal gettering sites for metal impurities. This letter reports the effect of cavities on the transient enhanced diffusion (TED) of boron. Boron implantation was carried out into wafers containing pre-formed cavities and TED of boron was suppressed during subsequent annealing, In some cases, the boron was introduced into an amorphous layer and the presence of cavities was also observed to reduce the amount of the transient enhanced diffusion occurring.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
