Pregled bibliografske jedinice broj: 461060
Ion beam induced nitridation and oxidation of silicon
Ion beam induced nitridation and oxidation of silicon // Secondary Ion Mass Spectrometry, SIMS XI / G.Gillen, R.Lareau, J.Bennet and F.Stevie (ur.).
Chichester: John Wiley & Sons, 1998. str. 331-335 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Ion beam induced nitridation and oxidation of silicon
Autori
Petravić, Mladen ; Williams, James S. ; Svensson, Bengt G. ; Conway, Martin
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Secondary Ion Mass Spectrometry, SIMS XI
/ G.Gillen, R.Lareau, J.Bennet and F.Stevie - Chichester : John Wiley & Sons, 1998, 331-335
Skup
11th Internatinal Conference on Secondary Ion Mass Spectrometry
Mjesto i datum
Orlando (FL), Sjedinjene Američke Države, 07.09.1997. - 12.09.1997
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
SIMS; oxidation; nitridation; Si
Sažetak
The low energy (< 1keV) or high energy (> 100 keV) nitrogen beam bombardment of silicon has attracted considerable interest due to possible applications of beam-induced silicon nitrides such as the oxidation barriers, gate insulators or silicon on insulator structures. However, little data exists on silicon nitride formation during bombardment, its angle dependence and on nitrogen bombardment in the 10 keV range, which is of particular interest for analytical techniques such as SIMS. In SIMS, oxygen ions are more commonly used as bombarding species and a large body of data can be found in the literature on oxide formation and segregation of impurities towards the oxide/substrate interface during low energy oxygen bombardment. In this work we compare nitride and oxide formation under 6-12 keV N2+ and O2+ bombardment of Si at 0o-60o angles of incidence, performed in a Riber MIQ 256 SIMS instrument. Despite the expected similar behaviour of nitrogen and oxygen ions (based on similar masses, ranges in Si, sputtering effects and the ability to form chemical compounds with Si), some large differences in compound formation and segregation of impurities were found. These differences are explained in terms of quite different atomic diffusitivities in oxides and nitrides, film structural differences and thermodynamic properties.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
