Pregled bibliografske jedinice broj: 461026
The role of oxygen on the stability of gettering of metals to cavities in silicon
The role of oxygen on the stability of gettering of metals to cavities in silicon // Applied physics letters, 75 (1999), 16; 2424-2426 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 461026 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
The role of oxygen on the stability of gettering of metals to cavities in silicon
Autori
Williams, J.S. ; Conway, M.J. ; Wong-Leung, J. ; Deenapanray, P.N.K. ; Petravić, Mladen ; Brown, R.A. ; Eaglesham, D.J. ; Jacobson, D.C.
Izvornik
Applied physics letters (0003-6951) 75
(1999), 16;
2424-2426
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
getteting; cavities; hydrogen; Si; SIMS; RBS
Sažetak
The effect of oxygen implanted into epitaxial Si layers on the ability to getter Au to nanocavities, previously formed by H implantation and annealing, has been studied by Rutherford backscattering, transmission electron microscopy, and secondary ion mass spectrometry. We demonstrate that oxygen is gettered to cavities during extended annealing at 950 °C. Furthermore, the arrival of oxygen at cavities is not only shown to inhibit subsequent attempts to getter Au to cavities, but also to eject chemisorbed Au from the cavity walls. Similar behavior is observed in Czochralski Si, where the source of oxygen is within the Si itself.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
