Pregled bibliografske jedinice broj: 461009
Oxide and nitride formation and segregation of metals during oxygen and nitrogen bombardment of silicon
Oxide and nitride formation and segregation of metals during oxygen and nitrogen bombardment of silicon // Materials Research Society Symposium Proceedings Vol.504 / Barbour, J.C. ; Roorda, S. ; Ila, D. (ur.).
Pittsburgh (PA): Materials Research Society, 1999. str. 153-157 (pozvano predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Oxide and nitride formation and segregation of metals during oxygen and nitrogen bombardment of silicon
Autori
Williams, J.S. ; Petravić, Mladen ; Conway, M ; Fu, L. ; Chivers, D.J.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Materials Research Society Symposium Proceedings Vol.504
/ Barbour, J.C. ; Roorda, S. ; Ila, D. - Pittsburgh (PA) : Materials Research Society, 1999, 153-157
ISBN
1-55899-409-2
Skup
1997 MRS Fall Meeting, Atomistic Mechanisms in Beam Synthesis and Irradiation of Materials
Mjesto i datum
Boston (MA), Sjedinjene Američke Države, 01.12.1997. - 05.12.1997
Vrsta sudjelovanja
Pozvano predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
oxides; nitrides; Si; SIMS
Sažetak
This study compares oxide and nitride formation during oxygen and nitrogen bombardment of Si. Ion bombardment is carried out both in a SIMS machine and in a conventional implanter at various temperatures. Stoichiometric Si0 2 and slightly N-rich Si 3N4 are formed during bombardment even at cryogenic temperatures. Implanted metals were found to have a strong tendency to be segregated at a moving Si-Si0 2 interface during oxygen bombardment but little segregation is observed at a Si- Si 3N4 interface.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
