Naslov
Angular and energy dependence of the ion beam oxidation of Si using oxygen ions from a dupolasmatron source
(Angular and energy dependence of the ion beam oxidation of Si using oxygen ions from a duoplasmatron source)

Autori
Deenapanray, P.N.K. ; Petravić, Mladen

Izvornik
Surface and interface analysis (0142-2421) 27 (1999), 2; 92-97

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
RBS ; oxidation ; Si ; SIMS

Sažetak
Oxygen ions with energy in the range 4–15 keV O‘ were used to synthesize surface oxide layers by bombarding Si samples at di†erent angles of incidence with respect to the surface normal. High-resolution Rutherford backscattering spectroscopy and channelling were used to determine both the stoichiometry and thickness of the surface oxides. In particular, the e†ect of energy on the critical angle for the formation of SiO was determined. The thickness of 2 the oxide layers were also simulated using the PROFILE and TRIM codes. A stoichiometric oxide was obtained for angles of incidence of Æ25Ä, irrespective of the ion energy used. The critical angle for oxide formation was found to be largest for the highest ion energy. The thickness of SiO varies linearly with the ion energy, and 2 correlates very well with PROFILE and TRIM code simulations.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA