Pregled bibliografske jedinice broj: 449436
On the angular dependence of profile broadening in silicon under oxygen and nitrogen bombardment
On the angular dependence of profile broadening in silicon under oxygen and nitrogen bombardment // Secondary Ion Mass Spectrometry, SIMS XII / Benninghoven, A. ; Bertrand, P. ; Migeon, H.-N. ; Werner, H.W. (ur.).
Amsterdam: Elsevier, 2000. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
On the angular dependence of profile broadening in silicon under oxygen and nitrogen bombardment
Autori
Petravić, M. ; Deenapanray, P.N.K. ; Demanet, C.M. ; and Moon, D.W.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Secondary Ion Mass Spectrometry, SIMS XII
/ Benninghoven, A. ; Bertrand, P. ; Migeon, H.-N. ; Werner, H.W. - Amsterdam : Elsevier, 2000
Skup
12th International Conference on Secondary Ion Mass Spectrometry
Mjesto i datum
Bruxelles, Belgija, 05.09.1999. - 11.09.1999
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
SIMS
Sažetak
The choice of impact angle for primary ion beam in SIMS analysis affects the sputtering yield of matrix and the depth resolution of impurity profiles. In general, both these quantities increase with the angle of incidence.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
