Pregled bibliografske jedinice broj: 449405
Selective Photon-Stimulated Desorption of Hydrogen from GaAs Surfaces
Selective Photon-Stimulated Desorption of Hydrogen from GaAs Surfaces // Physical Review Letters, 84 (2000), 2255-2258 doi:10.1103/PhysRevLett.84.2255 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 449405 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Selective Photon-Stimulated Desorption of Hydrogen from GaAs Surfaces
Autori
Petravić, Mladen ; Deenapanray, P.N.K. ; Comtet, G. ; Hellner, L. ; Dujardin, G. ; Usher, B.F.
Izvornik
Physical Review Letters (0031-9007) 84
(2000);
2255-2258
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
selective PSD; hydrogen; GaAs
Sažetak
Photon-stimulated desorption of H1 from hydrogenated GaAs (110) and (100) surfaces was studied as a function of photon energy. Distinct peaks, observed around As 3d core-level binding energy for desorption from the GaAs (100) surface and in the As 3d and Ga 3p region for desorption from the GaAs (110) surface, show a striking similarity with the fine structure (spin-orbit splitting) measured in the photoemission from As 3d and Ga 3p levels. These results provide clear evidence for direct desorption processes and represent a basis for selective modification of hydrogenated GaAs surfaces.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
- MEDLINE
